(Hong Kong)
Product Summary
The K6T1008C2E-GB70 is a low power CMOS static RAM fabricated by SAMSUNG s advanced CMOS process technology. It supports various operating temperature ranges and have various package types for user flexibility of system design.
Parametrics
K6T1008C2E-GB70 absolute maximum ratings: (1)voltage on any pin relative to VSS: -0.5 to 7V; (2)voltage on VCC supply relative to VSS power dissipation: -0.5 to 7V; (3)power disspation: 1W; (4)storage temperature: -65 to 150℃; (5)operating temperature: 0 to 70℃.
Features
K6T1008C2E-GB70 features: (1)Process Technology: TFT; (2)Organization: 128Kx8; (3)Power Supply Voltage: 4.5 to 5.5V; (4)Low Data Retention Voltage: 2V(Min); (5)Three state output and TTL Compatible; (6)Package Type: 32-DIP-600, 32-SOP-525, 32-TSOP1-0820F/R.
Diagrams
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 K6T1008C2C |
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K6T1008C2E |
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K6T1008C2E-L |
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K6T1008U2C |
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