K4T1G084QE-HCLE6

1Gb E-die DDR2 SDRAM, -1 to 2.3V, -0.5 to 2.3V, FBGA

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Price:: US $7.80~15.70 / piece [Get Latest Price]

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Qty (lots)	Price/lot
	US $7.80~15.70

PartNumber:: K4T1G084QE-HCLE6

Brand:: Samsung semiconductor - SAMSUNG | Pack: FBGA | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Total Price:: US $0

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Products Upload time: 2012-07-12

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Part Number:K4T1G084QE-HCLE6
US $7.80 - 15.70
ECA1HHG220

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Product Summary

The K4T1G084QE-HCLE6 is a 1Gb E-die DDR2 SDRAM.

Parametrics

K4T1G084QE-HCLE6 absolute maximum ratings: (1)VDD: -1 to 2.3V; (2)VDDQ: -0.5 to 2.3V; (3)VDDL: -0.5 to 2.3V; (4)VIN, VOUT: -0.5 to 2.3V; (5)TSTG: -55 to 100℃.

Features

K4T1G084QE-HCLE6 features: (1)JEDEC standard VDD = 1.8V ± 0.1V Power Supply; (2)VDDQ = 1.8V ± 0.1V; (3)333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin; (4)Write Latency(WL) = Read Latency(RL) -1; (5)12.-Chip Driver(OCD) Impedance Adjustment ; (6)Die Termination.