Product Summary

3SK73 IS TOSHIBA,
3SK73 IS DIP-4,
3SK73 IN STOCK.

Parametrics

type: N-channel

Biggest dissipation power (Pd): 300mW

Leakage source voltage (Uds): 20V

Leak gate voltage (Udg):

Gate voltage source (Ugs): 9V

The biggest drain current (Id): 30mA

The maximum working temperature (Tj): 150°C

Conduction rise time (tr):

Output capacitance (Cd), pf: 5pF

Static drain-source conduction resistance (Rds), Ohm:

manufacturers: N/A

encapsulation: SO

The main purpose: MOSFET, Dual gate